DEPOSITION PARAMETERS STUDIES OF SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CVD PROCESS USING SILANE AMMONIA

Authors
LEE KR SUNDARAM KB MALOCHA DC
Citation
Kr. Lee et al., DEPOSITION PARAMETERS STUDIES OF SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CVD PROCESS USING SILANE AMMONIA, Journal of materials science. Materials in electronics, 4(4), 1993, pp. 283-287
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
4
Issue
4
Year of publication
1993
Pages
283 - 287
Database
ISI
SICI code
0957-4522(1993)4:4<283:DPSOSF>2.0.ZU;2-2
Abstract
Silicon nitride films were deposited by a plasma-enhanced chemical vap our deposition technique using silane-ammonia as the reactant gas mixt ure. The influence of the process parameters such as flow ratio of the reactant gases, pressure, substrate temperature, r.f. power, time of deposition and electrode spacing, on the deposition and etch rates wer e investigated and experimental results are presented.