FABRICATION AND PROPERTIES OF ALUMINO-BORO-SILICATE GLASS-CERAMIC SYSTEMS

In current microelectronics packaging applications, low-temperature fi red substrates with low dielectric constant are required. Formulations of SiO2, B2O3, Al2O3, and CaO have been used as substrate materials w hich can be sintered as low as 1000-degrees-C in air. The electrical b ehaviour, thermal expansion coefficient, and mechanical property of th e fabricated substrate materials are evaluated. The as-sintered substr ates possess the following characteristics: low dielectric constant of 4-5 at 1 MHz; a loss factor smaller than 0.2% at 1 MHz; and a thermal expansion of 3.57 x 10(-6)-degrees-C-1 which is very close to that of silicon (3.5 x 10(-6)-degrees-C-1).