ABOUT AN INCREASE OF EXCITON BINDING-ENERGY IN LAYERED INSE

Authors
GNATENKO YP ZHIRKO YI
Citation
Yp. Gnatenko et Yi. Zhirko, ABOUT AN INCREASE OF EXCITON BINDING-ENERGY IN LAYERED INSE, Physica status solidi. b, Basic research, 180(1), 1993, pp. 147-153
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
180
Issue
1
Year of publication
1993
Pages
147 - 153
Database
ISI
SICI code
0370-1972(1993)180:1<147:AAIOEB>2.0.ZU;2-X
Abstract
At T > 25 K an increase of the direct free exciton binding energy DELT AE(exc)d in the exciton absorption spectra of InSe is found. The calcu lations show that this phenomena may be attributed to an increase of t he exciton reduced mass mu(exc) due to exciton-interlayer optical pho non interaction. The dynamical processes of exciton-phonon interaction with temperature in layered InSe are discussed.