Yt. Rebane et Jw. Steeds, HOLE BOUND-STATES IN THE DEFORMATION FIELD OF SCREW DISLOCATIONS IN CUBIC SEMICONDUCTORS, Physical review. B, Condensed matter, 48(20), 1993, pp. 14963-14972
For the spherically averaged Hamiltonian approximation an accurate non
variational calculation is reported of the energies of the one-dimensi
onal bands split off from the edge of the valence band by the shear st
rain fields of screw dislocations in various cubic semiconductors. The
calculation gives significantly greater binding energies for holes th
an previous variational calculations and also a different order of the
first two levels when the ratio of light- and heavy-hole masses is le
ss than 0.19. The calculation was performed on the basis of the effect
ive-mass and deformation-potential approximations. This approach is ju
stified because the resulting binding energies are much smaller than t
he energy gaps. The results may be used for the interpretation of vari
ous dislocation-related phenomena such as luminescence, absorption, mi
crowave conductivity, and combined resonance (a kind of electric-dipol
e spin resonance).