1D-TO-2D TUNNELING IN ELECTRON WAVE-GUIDES

We present a comprehensive experimental study of the tunneling and tra nsport characteristics of split-gate ''leaky'' one-dimensional (1D) el ectron waveguides implemented in AlxGa1-xAs/GaAs heterostructures. In a leaky electron waveguide, electrons can tunnel out of the 1D channel through a thin side wall barrier into an adjacent 2D electron bath. A sharp peak and valley structure is observed in the 1D-to-2D tunneling current as the carrier concentration is modulated in the 1D waveguide through the field-effect action of the split gates. A semiclassical m odel confirms that the tunneling features originate from the 1D subban ds in the channel.