CONDUCTION-ELECTRON SPIN-RESONANCE IN ZINCBLENDE GAN THIN-FILMS

Citation
M. Fanciulli et al., CONDUCTION-ELECTRON SPIN-RESONANCE IN ZINCBLENDE GAN THIN-FILMS, Physical review. B, Condensed matter, 48(20), 1993, pp. 15144-15147
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
48
Issue
20
Year of publication
1993
Pages
15144 - 15147
Database
ISI
SICI code
0163-1829(1993)48:20<15144:CSIZGT>2.0.ZU;2-2
Abstract
We report electron-spin-resonance measurements on zinc-blende GaN. The observed resonance has an isotropic g value of 1.9533+/-0.0008 indepe ndent of temperature, a Lorentzian line shape, and a linewidth (18 G a t 10 K) which depends on temperature. The spin-lattice relaxation time at 10 K was estimated to be T-le=(6+/-2)X10(-5) sec. Using a five-ban d model a g value consistent with the experimental results was obtaine d and a conduction-electron effective mass m/m(0)=0.15+/-0.01 was cal culated. The observed signal, together with conductivity data, was att ributed to nonlocalized electrons in a band of autodoping centers and in the conduction band.