CONFINEMENT-ENHANCED BIEXCITON BINDING-ENERGY IN SEMICONDUCTOR QUANTUM DOTS

Authors
KANG KI KEPNER AD GAPONENKO SV KOCH SW HU YZ PEYGHAMBARIAN N
Citation
Ki. Kang et al., CONFINEMENT-ENHANCED BIEXCITON BINDING-ENERGY IN SEMICONDUCTOR QUANTUM DOTS, Physical review. B, Condensed matter, 48(20), 1993, pp. 15449-15452
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
48
Issue
20
Year of publication
1993
Pages
15449 - 15452
Database
ISI
SICI code
0163-1829(1993)48:20<15449:CBBISQ>2.0.ZU;2-Q
Abstract
Experimental observation of the ground-state biexciton transition in C dSx Se-1-x quantum dots in glass is presented in a three-beam experime nt, involving a probe, a pump, and a saturating laser pulse. The obser ved quantum-dot biexciton ground state has a strongly enhanced binding energy compared to the bulk as theoretically predicted. The biexciton binding energy is measured as a function of quantum-dot size and the results are compared with calculations.