MODIFICATION OF SI(100) SUBSTRATE BONDING BY ADSORBED GE OR SI DIMER ISLANDS

Authors
QIN XR LIU F SWARTZENTRUBER BS LAGALLY MG
Citation
Xr. Qin et al., MODIFICATION OF SI(100) SUBSTRATE BONDING BY ADSORBED GE OR SI DIMER ISLANDS, Physical review letters, 81(11), 1998, pp. 2288-2291
Citations number
17
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
81
Issue
11
Year of publication
1998
Pages
2288 - 2291
Database
ISI
SICI code
0031-9007(1998)81:11<2288:MOSSBB>2.0.ZU;2-D
Abstract
High-resolution scanning tunneling microscopy studies of the Si(100)-( 2 x 1) surface show a heretofore unrecognized distortion of the substr ate structure when islands form during the initial stage of growth of either Si or Ge. The distortion, reflecting the influence of strain, e xtends at least three dimers away from the adsorption sites. We presen t a realistic structural model.