LOW-TEMPERATURE ELECTRONIC TRANSPORT BEHAVIOR OF POWDER-METALLURGICALSIGE ALLOYS

Authors
PIXIUS K SCHILZ J
Citation
K. Pixius et J. Schilz, LOW-TEMPERATURE ELECTRONIC TRANSPORT BEHAVIOR OF POWDER-METALLURGICALSIGE ALLOYS, Applied physics. A, Solids and surfaces, 57(6), 1993, pp. 517-520
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics. A, Solids and surfaces → ACNP
ISSN journal
07217250
Volume
57
Issue
6
Year of publication
1993
Pages
517 - 520
Database
ISI
SICI code
0721-7250(1993)57:6<517:LETBOP>2.0.ZU;2-L
Abstract
Electronic transport properties of mechanically alloyed phosphorous-do ped SiGe alloys at low temperatures were examined. We found that in th is granular medium hopping-processes show an influence on the electron ic conductivity. In addition, Hall-measurements revealed that the elec tron mobility reflects the band-structure of this alloy concerning int ervalley-scattering and alloy-scattering. Mobility reaches a minimum a t an alloy composition of roughly 25 at.% silicon.