ON THE INFLUENCE OF INTERFACES AND LOCALIZED STRESS-FIELDS ON IRRADIATION-INDUCED POINT-DEFECT DISTRIBUTIONS IN SILICON

High-flux 1-MeV electron irradiation in a high voltage transmission el ectron microscope is used to study the influence of interfaces and loc alised stress fields on {113}-defect generation in silicon. A semi-qua ntitative model is presented to explain the observations, suggesting t hat the silicon oxide/silicon interface is a stronger sink for self-in terstitials than for vacancies. It is shown that the position and the height of the maximum of the {113}-defect density strongly depends on the strength of the interface as a vacancy sink and that compressive s training of the silicon substrate slows down the diffusion of vacancie s towards the interface.