BINDING-ENERGY OF BIEXCITONS IN 2-DIMENSIONAL SEMICONDUCTORS

Authors
LIU JJ KONG XJ WEI CW LI SS
Citation
Jj. Liu et al., BINDING-ENERGY OF BIEXCITONS IN 2-DIMENSIONAL SEMICONDUCTORS, Chinese Physics Letters, 15(8), 1998, pp. 588-590
Citations number
22
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
15
Issue
8
Year of publication
1998
Pages
588 - 590
Database
ISI
SICI code
0256-307X(1998)15:8<588:BOBI2S>2.0.ZU;2-W
Abstract
The binding energies of a two-dimensional (2D) biexciton have been cal culated variationally for all values of the effective electron-to-hole mass ratio a by using a three-parameter wave function. The ratio of t he binding energy of a 2D biexciton to that of a 2D exciton is found t o be from 0.582 to 0.220. The results agree fairly well with previous experimental results. The results of this approach are compared with t hose of earlier theories.