FIRST-PRINCIPLES ELECTRONIC-STRUCTURE OF CU-CENTERS IN CU-DOPED ZNS( LUMINESCENCE)

Citation
Zp. Zhang et al., FIRST-PRINCIPLES ELECTRONIC-STRUCTURE OF CU-CENTERS IN CU-DOPED ZNS( LUMINESCENCE), Chinese Physics Letters, 15(8), 1998, pp. 591-593
Citations number
14
Categorie Soggetti
Physics
Journal title
ISSN journal
0256307X
Volume
15
Issue
8
Year of publication
1998
Pages
591 - 593
Database
ISI
SICI code
0256-307X(1998)15:8<591:FEOCIC>2.0.ZU;2-P
Abstract
The electronic structures of various Cu+ luminescence centers in wurtz ite ZnS are studied by using first-principles linear muffin-tin-orbita l method combining atomic sphere approximation. The results for ZnS:Cu :CI and ZnS:Cu:Al show that Cu acceptor states are anomalously deep (b eyond 2.7 eV above the top of valence band) and located near the botto m of conduction band in these two cases. On the other hand, the result s for ZnS:Cu with sulfur vacancies manifest that the Cu+ center is an associated center, whose Cu d-like states are situated above the top o f valence band.