ELECTRONIC-STRUCTURE OF INASXP1-X INP STRAINED QUANTUM WIRES/

The electronic structure of InAs0.25P0.75/InP strained quantum wires g rown on InP(001) oriented substrates is studied within the framework o f effective-mass envelope-function theory. At the Gamma point, the ele ctron and valence subband energy levels with and without spin-split-of f band, and the absorption spectra are calculated. The effects of stra in and spin-split-off band on valence energy levels are presented. The results show that the uppermost valence subband is almost unaffected by the strain induced coupling between the heavy- and light-hole bands and the spin-split-off bands while the other subbands are more marked ly affected in the InAs0.25P0.75/InP strained quantum wires.