MICRO-RAMAN SCATTERING PROPERTIES OF HIGHLY ORIENTED ALN FILMS

Micro-Raman scattering by highly oriented crystalline aluminum nitride has been measured. Phonon modes in AlN were identified in different s cattering geometry configurations and scattering polarizations. The ph onon modes revealed that aluminum nitride films are highly oriented wi th the wurtzite c-axis direction normal to the film plane. The Raman s cattering modes are broadened and shifted due to grain boundaries and other defects in the films. The defect scattering was analysed using t he phonon confinement model. These results were compared with results obtained from X-ray diffraction powder patterns and high-resolution tr ansmission electron microscopy.