SIMULATION OF SOI DEVICES AND CIRCUITS USING BSIM3SOI

A versatile SOI model derived from the BSIM3v3 hulk MOSFET mode! is ca pable of simulating partially and fully depleted devices with options for self-heating and floating body effects, The model can automaticall y switch between fully and partially depleted regimes. After refining body current models we for the first time present successful de and tr ansient device and circuit simulation of an SOI MOSFET technology with L-eff below 0.2 mu m.