Q. Lu et al., LEAKAGE CURRENT COMPARISON BETWEEN ULTRA-THIN TA2O5 FILMS AND CONVENTIONAL GATE DIELECTRICS, IEEE electron device letters, 19(9), 1998, pp. 341-342
Capacitors with ultra-thin (6.0-12.0 mm) CVD Ta2O5 him were fabricated
on lightly doped Si substrates and their leakage current (I-g-V-g,) a
nd capacitance (C-V) characteristics were studied. For the first time,
samples with stack equivalent oxide thickness around 2.0 nm were comp
ared with ultra-thin silicon dioxide and silicon oxynitride. The Ta2O5
samples showed remarkably lower leakage current, which not only verif
ied the advantages of ultra-thin Ta2O5 as dielectrics for high density
DRAM's, but also suggested the possibility of its application as the
gate dielectric material in MOSFET's.