AC FLOATING-BODY EFFECTS IN SUBMICRON FULLY DEPLETED (FD) SOI NMOSFETS AND THE IMPACT ON ANALOG APPLICATIONS

Citation
Yc. Tseng et al., AC FLOATING-BODY EFFECTS IN SUBMICRON FULLY DEPLETED (FD) SOI NMOSFETS AND THE IMPACT ON ANALOG APPLICATIONS, IEEE electron device letters, 19(9), 1998, pp. 351-353
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
07413106
Volume
19
Issue
9
Year of publication
1998
Pages
351 - 353
Database
ISI
SICI code
0741-3106(1998)19:9<351:AFEISF>2.0.ZU;2-K
Abstract
We report the impact of submicron fully depleted (FD) SOI MOSFET techn ology on device ac characteristics and the resultant effects on analog circuit issues. The weak de kink and high frequency ac kink dispersio n in FD SOI still degrade circuit performance in terms of distortion a nd low-frequency noise requirements. These issues raise concerns about PD devices for mixed-mode applications. Therefore, further device opt imization such as source/drain engineering is still necessary to solve the aforementioned issues for PD SOI. On the other hand, partially de pleted SOI MOSFET with body contact structures provide an alternative technology for RF/baseband analog applications.