Yc. Tseng et al., AC FLOATING-BODY EFFECTS IN SUBMICRON FULLY DEPLETED (FD) SOI NMOSFETS AND THE IMPACT ON ANALOG APPLICATIONS, IEEE electron device letters, 19(9), 1998, pp. 351-353
We report the impact of submicron fully depleted (FD) SOI MOSFET techn
ology on device ac characteristics and the resultant effects on analog
circuit issues. The weak de kink and high frequency ac kink dispersio
n in FD SOI still degrade circuit performance in terms of distortion a
nd low-frequency noise requirements. These issues raise concerns about
PD devices for mixed-mode applications. Therefore, further device opt
imization such as source/drain engineering is still necessary to solve
the aforementioned issues for PD SOI. On the other hand, partially de
pleted SOI MOSFET with body contact structures provide an alternative
technology for RF/baseband analog applications.