MICROSCOPY WITH A SINGLE-ELECTRON TRANSISTOR PROBE

Authors
HESS HF FULTON TA YOO MJ YACOBY A
Citation
Hf. Hess et al., MICROSCOPY WITH A SINGLE-ELECTRON TRANSISTOR PROBE, Solid state communications, 107(11), 1998, pp. 657-661
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
107
Issue
11
Year of publication
1998
Pages
657 - 661
Database
ISI
SICI code
0038-1098(1998)107:11<657:MWASTP>2.0.ZU;2-9
Abstract
The coulomb blockade effect of a single electron transistor is harness ed to make an electrometer probe capable of imaging electric propertie s of a sample at 100 nm resolution. The sensitivity is such that it ca n image individual electrons that have been photoexcited, a sensitivit y adequate so that a number of other mesoscopic phenomenon can be dire ctly imaged. (C) 1998 Published by Elsevier Science Ltd.