ENHANCED HOLE INJECTION AND BRIGHTNESS OF ORGANIC ELECTROLUMINESCENT DEVICES WITH INDIUM TIN OXIDE SURFACE MODIFICATION USING OXYGEN PLASMATREATMENT

Authors
XIE ZY HUANG JS CHEN BJ HOU JY NAN J DAI GR LIU SY
Citation
Zy. Xie et al., ENHANCED HOLE INJECTION AND BRIGHTNESS OF ORGANIC ELECTROLUMINESCENT DEVICES WITH INDIUM TIN OXIDE SURFACE MODIFICATION USING OXYGEN PLASMATREATMENT, Chinese Physics Letters, 15(7), 1998, pp. 537-538
Citations number
8
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
15
Issue
7
Year of publication
1998
Pages
537 - 538
Database
ISI
SICI code
0256-307X(1998)15:7<537:EHIABO>2.0.ZU;2-D
Abstract
The improvement of indium tin oxide (ITO) anode contact to organic ele ctroluminescent devices via oxygen plama treatment is investigated. En hanced hole-injection efficiency improved the performance of organic l ight-emitting devices. The injection current increased by 1-2 orders o f magnitude and the turn-on voltages droped several volts. Much higher injection current could be applied to achieve much higher brightness. Maximum brightness and luminous efficiency can reach to about 4000 cd /m(2) and 0.31 m/W for the structure of ITO/TPD/Alq(3)/Al, respectivel y.