CLEAVAGE OF C-C AND C-F BUNDS BY XE-DOT AND I+ IONS IN REACTIONS AT AFLUORINATED SELF-ASSEMBLED MONOLAYER SURFACE - COLLISION ENERGY-DEPENDENCE AND MECHANISMS(CENTER)
B. Feng et al., CLEAVAGE OF C-C AND C-F BUNDS BY XE-DOT AND I+ IONS IN REACTIONS AT AFLUORINATED SELF-ASSEMBLED MONOLAYER SURFACE - COLLISION ENERGY-DEPENDENCE AND MECHANISMS(CENTER), Journal of the American Chemical Society, 120(32), 1998, pp. 8189-8198
Collisions of Xe+. with a fluorinated self-assembled monolayer surface
cause C-C and C-F bond cleavage as evidenced by the reactively scatte
red ions XeCF2+., XeCF+, and XeF+. The projectile ion extracts difluor
ocarbene from the fluorocarbon to form XeCF2+. in a low-energy reactio
n, while simple fluorine abstraction also occurs and yields XeF+ in a
higher energy but entropically favored process. The intact trifluorome
thyl iodide radical cation, ICF3+., resulting from simple C-C cleavage
, is observed as a scattered product when I+ is chosen as projectile,
as are analogous ions IF+., ICF+., and ICF2+, resulting from C-F and C
-C bond cleavage with concomitant I-F and I-C bond formation. Multiple
F-atom abstraction occurs in a single collision evidenced by the prod
uct, IF2+. Density functional theory calculations confirm that the rea
ctions that lead to XeF+ and XeCF+ are more endothermic than XeCF2+. f
ormation. The experimental observations and enthalpy calculations sugg
est that two reaction pathways contribute to XeF+ formation: oxidative
insertion at low collision energy and formation of a fluoronium ion (
-F+-) at high collision energy. The generation of XeCF2+. products is
also accounted for through an oxidative insertion mechanism. Although
chemical sputtering, i.e., charge exchange with liberation of fluoroca
rbon cations from the surface, also occurs even at very low collision
energy, it does not appear io contribute to the formation of ion/surfa
ce reaction products discussed.