SUBMILLIAMPERE THRESHOLD CURRENT IN 1.3-MU-M INASP N-TYPE MODULATION-DOPED MQW LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Authors
SHIMIZU H KUMADA K YAMANAKA N IWAI N MUKAIHARA T KASUKAWA A
Citation
H. Shimizu et al., SUBMILLIAMPERE THRESHOLD CURRENT IN 1.3-MU-M INASP N-TYPE MODULATION-DOPED MQW LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Electronics Letters, 34(16), 1998, pp. 1591-1593
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
16
Year of publication
1998
Pages
1591 - 1593
Database
ISI
SICI code
0013-5194(1998)34:16<1591:STCI1I>2.0.ZU;2-B
Abstract
A very low CW threshold current of 0.9 mA has been obtained in a 1.3 m u m InAsP n-type modulation doped MQW laser at room temperature. This is the lowest threshold current ever reported for long-wavelength lase rs using n-type modulation doping, and the lowest result grown by gas source molecular beam epitaxy in the long wavelength region.