2.7-MU-M LEDS FOR WATER-VAPOR DETECTION GROWN BY MBE ON INP

Authors
KRIER A CHUBB D HOPKINSON M
Citation
A. Krier et al., 2.7-MU-M LEDS FOR WATER-VAPOR DETECTION GROWN BY MBE ON INP, Electronics Letters, 34(16), 1998, pp. 1606-1607
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
16
Year of publication
1998
Pages
1606 - 1607
Database
ISI
SICI code
0013-5194(1998)34:16<1606:2LFWDG>2.0.ZU;2-V
Abstract
In0.87Ga0.13As/InAs0.70P0.30 double heterostructure light emitting dio des were grown on InP substrates using strain relaxed buffers by molec ular beam epitaxy. The InAsP buffer incorporates a compositional step- back to reduce the threading dislocation density in the active region. Efficient electroluminescence at 2.7 mu m was obtained at room temper ature. A strong absorption is observed in the emission spectrum due to the presence of water vapour.