4 NOISE PARAMETER DETERMINATION METHOD FOR TRANSISTORS BASED ON THE FREQUENCY-DEPENDENCE OF THE NOISE-FIGURE

Authors
DANELON V CROZAT P ANIEL F VERNET G
Citation
V. Danelon et al., 4 NOISE PARAMETER DETERMINATION METHOD FOR TRANSISTORS BASED ON THE FREQUENCY-DEPENDENCE OF THE NOISE-FIGURE, Electronics Letters, 34(16), 1998, pp. 1612-1613
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
16
Year of publication
1998
Pages
1612 - 1613
Database
ISI
SICI code
0013-5194(1998)34:16<1612:4NPDMF>2.0.ZU;2-S
Abstract
A new high frequency noise measurement method has been developed for t ransistors based on the frequency dependence of the noise figure. Resu lts for a 1 mu m gate length MESFET are presented.