STRUCTURAL AND ELECTRICAL-PROPERTIES OF INDIUM-DOPED CD0.7ZN0.3S THIN-FILMS - A CORRELATION

This paper describes a correlation between the structural and electric al properties of the indium doped Cd0.7Zn0.3S composite thin films. Th e samples were prepared in an alkaline medium using a well known chemi cal deposition process and doped with a varying concentration of indiu m from 0.01 to 5 mol % with a view to reduce the electrical resistivit y and make them suitable for photoelectrochemical solar cell applicati ons. The structural investigations showed a decrease in an interplanar distance, d, with an increase in In-doping concentration up to 0.1 mo l % and for further increase of indium concentration, d increases even to a higher value than that of the host. The measurements made on the electrical conductivity showed an increase in the conductivity up to a 0.1 mol % In-doping level and for further increase: in doping concen tration, the conductivity decreases, attains a minimum at about 0.5 mo l % In-concentration and again increased a little and saturates. The o bserved changes in the electrical conductivity have been explained on the basis of the changes in the d-value of (002) plane as a result of the In-doping concentration.