A HIGHLY MINIATURIZED FRONT-END HIC FOR 1.9 GHZ BANDS

A miniaturized receiver front-end hybrid IC (HIC) using MBB (microbump bonding) technology has been demonstrated. A GaAs IC die was flip-chi p bonded on a ceramic substrate with matching circuits on its surface. New technologies as 0.5 mu m gate buried p-lager MESFET's, on chip hi gh-dielectric constant capacitors, and intermediate tuned circuits hav e,enabled miniaturization and low power-consumption at the same time. The fabricated HIC measured only 3.5 x 4.0 x 1.0 mm which corresponded to a 64% reduction from the conventional one. Conversion gain of 16.0 dB, IP3 out of 0 dBm, noise figure of 5.1 dB, and image rejection rat io over 20 dBc were obtained for the new HIC at 1.9 GHz, 3.0 V, and 4. 5 mA of power supply.