This paper describes the design and performance of an 80-Gbit/s 2:1 se
lector-type multiplexer IC fabricated with InAlAs/InGaAs/InP HEMT's. B
y using a double-layer interconnection process with a low-dielectric i
nsulator, microstrip lines were designed to make impedance-matched, hi
gh-speed intercell connection of critical signal paths. The record ope
rating data rate was measured on a 3-in wafer. In spite of the bandwid
th limitation on the measurement setup, clear eye patterns were succes
sfully observed for the first time. The obtained circuit speed improve
ment from the previous result of 64 Gbit/s owes much to this high-spee
d interconnection design.