DESIGN OF RF INTEGRATED-CIRCUITS USING SIGE BIPOLAR TECHNOLOGY

We report on design aspects and the implementation of radio-frequency integrated circuits using TEMIC's SiGe technology. The differences bet ween the device parameters of silicon bipolar junction transistor and silicon germanium heterojunction bipolar transistor technology and the ir influence on IC design are discussed. Design and measurement result s of RFIC's, including low noise amplifier, power amplifier, and singl e-pole, double-throw antenna switch for application in a 1.9 GHz digit al enhanced cordless telecommunications RF front end are presented.