A scaleable, statistical model has been developed for silicon germaniu
m heterojunction transistors (SiGe HBT's), which are components of a c
ommercially available BiCMOS technology for high-frequency application
s. The SPICE Gummel-Poon (SGP) model parameters are scaled, and statis
tics added, using language features built into HSPICE. DC and ac fit i
s good over a wide range in emitter sizes, allotting an open-ended set
of devices to be used,vith valid modeling capabilities. Features of I
BM's HBT technology that contribute to the scaleability of the technol
ogy are discussed.