SURFACE PHOTOOXIDATION AND AG DEPOSITION ON AMORPHOUS GES2

Bandgap radiation in the presence of gaseous oxygen induces surface an d selvedge photo-oxidation of amorphous GeS2. The phenomenon involves preferential oxidation of the Ge sites and may be understood in terms of the structural and electronic properties of GeS2. Such photo-oxidiz ed films exhibit very different properties towards the subsequent depo sition of Ag, as compared with untreated films. The inverse system (Ge S2 deposition on Ag) exhibits markedly different interfacial propertie s, not previously recognized: this could have significant implications for the interpretation of bulk photodiffusion experiments.