ANALYSIS OF HEBB-WAGNER POLARIZATION MEASUREMENTS UNDER RELATIVELY HIGH APPLIED VOLTAGES

Authors
RIESS I
Citation
I. Riess, ANALYSIS OF HEBB-WAGNER POLARIZATION MEASUREMENTS UNDER RELATIVELY HIGH APPLIED VOLTAGES, Solid state ionics, 66(3-4), 1993, pp. 331-336
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Solid state ionics → ACNP
ISSN journal
01672738
Volume
66
Issue
3-4
Year of publication
1993
Pages
331 - 336
Database
ISI
SICI code
0167-2738(1993)66:3-4<331:AOHPMU>2.0.ZU;2-2
Abstract
Hebb-Wagner type polarization measurements are analyzed for a wide ran ge of applied voltages including high voltages. The analysis by Wagner assumes that the concentration of mobile ionic defects is roughly uni form. This assumption fails at high applied voltages. Existing solutio ns to the problem of polarization measurements under high aplied volta ges are approximate. Here an analytic solution is presented which omit s approximation used before.