EVIDENCE OF SI PRESENCE IN SELF-ASSEMBLED GE ISLANDS DEPOSITED ON A SI(001) SUBSTRATE

Authors
MAGIDSON V REGELMAN DV BESERMAN R DETTMER K
Citation
V. Magidson et al., EVIDENCE OF SI PRESENCE IN SELF-ASSEMBLED GE ISLANDS DEPOSITED ON A SI(001) SUBSTRATE, Applied physics letters, 73(8), 1998, pp. 1044-1046
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
8
Year of publication
1998
Pages
1044 - 1046
Database
ISI
SICI code
0003-6951(1998)73:8<1044:EOSPIS>2.0.ZU;2-T
Abstract
Nominal Ge islands were grown by a molecular beam epitaxy technique on a Si(001) substrate. Island positions and shapes were measured by ato mic force microscopy. Two types of islands with different sizes and sh apes are present. The Si concentration distribution inside the islands was measured by Raman imaging technique with a 0.4 mu m resolution, a nd was found to vary between 10% and 30% in large islands and be 10% i n smaller islands. (C) 1998 American Institute of Physics. [S0003-6951 (98)04734-2].