S. Gan et al., CHARACTERIZATION OF DISLOCATIONS IN GERMANIUM SUBSTRATES INDUCED BY MECHANICAL-STRESS, Applied physics letters, 73(8), 1998, pp. 1068-1070
Dislocations are observed in germanium crystals (9 degrees off axis to
ward the [011] direction) that have undergone plastic deformation. Opt
ical microscopy reveals that the substrates exhibit a crosshatch patte
rn, consisting of ridges and trenches that extend in the [011] and [01
(1) over bar] directions. Further characterization of these features
with scanning tunneling microscopy shows that they consist of bands of
steps. These bands are created when a group of dislocations emerge on
to the crystal surface from the bulk. The dislocations are determined
to be type (a/2)[011]. (C) 1998 American Institute of Physics. [S0003-
6951(95)04334-4].