CHARACTERIZATION OF DISLOCATIONS IN GERMANIUM SUBSTRATES INDUCED BY MECHANICAL-STRESS

Authors
Citation
S. Gan et al., CHARACTERIZATION OF DISLOCATIONS IN GERMANIUM SUBSTRATES INDUCED BY MECHANICAL-STRESS, Applied physics letters, 73(8), 1998, pp. 1068-1070
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
73
Issue
8
Year of publication
1998
Pages
1068 - 1070
Database
ISI
SICI code
0003-6951(1998)73:8<1068:CODIGS>2.0.ZU;2-M
Abstract
Dislocations are observed in germanium crystals (9 degrees off axis to ward the [011] direction) that have undergone plastic deformation. Opt ical microscopy reveals that the substrates exhibit a crosshatch patte rn, consisting of ridges and trenches that extend in the [011] and [01 (1) over bar] directions. Further characterization of these features with scanning tunneling microscopy shows that they consist of bands of steps. These bands are created when a group of dislocations emerge on to the crystal surface from the bulk. The dislocations are determined to be type (a/2)[011]. (C) 1998 American Institute of Physics. [S0003- 6951(95)04334-4].