ELECTRONIC-STRUCTURE OF SELF-ASSEMBLED INAS QUANTUM DOTS IN GAAS MATRIX

Capacitance-voltage characteristics have been measured at various freq uencies and temperatures for structures containing a sheet of self-ass embled InAs quantum dots in both n-GaAs and p-GaAs matrices. Analysis of the capacitance-voltage characteristics shows that the deposition o f 1.7 ML of InAs forms quantum dots with electron levels 80 meV below the bottom of the GaAs conduction band and two heavy-hole levels at 10 0 and 170 meV above the top of the GaAs valence band. The carrier ener gy levels agree very well with the recombination energies obtained fro m photoluminescence spectra. (C) 1998 American Institute of Physics. [ S0003-6951(98)01034-1]