BAND OFFSETS AT GAINP ALGAINP(001) HETEROSTRUCTURES LATTICE-MATCHED TO GAAS/

Authors
ZHANG XH CHUA SJ FAN WJ
Citation
Xh. Zhang et al., BAND OFFSETS AT GAINP ALGAINP(001) HETEROSTRUCTURES LATTICE-MATCHED TO GAAS/, Applied physics letters, 73(8), 1998, pp. 1098-1100
Citations number
40
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
8
Year of publication
1998
Pages
1098 - 1100
Database
ISI
SICI code
0003-6951(1998)73:8<1098:BOAGAH>2.0.ZU;2-P
Abstract
In this work, the band offsets at the Ga0.5In0.5P/AlxGa0.5-xIn0.5P het erojunction lattice matched to (001) GaAs was calculated over the whol e range of aluminum composition from x=0.0 to 0.5 using the first-prin ciples pseudopotential method with virtual crystal approximation. The valence band offset, VBO, varies with x as VBO = 0.433x eV, while the inferred conduction band offset CBO at Gamma minimum (bandgap differen ce minus the valence band offset) varies in x as CBOGamma = 0.787x eV. Our results are in good agreement with the experimental data. (C) 199 8 American Institute of Physics. [S0003-6951(98)02034-8]