DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF 1 KEV HE, NE, AND AR ION-BOMBARDED, EPITAXIALLY GROWN N-SI

Deep level transient spectroscopy has been used to investigate the ele ctronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the different bombardment gases s uggested that they were from structurally related defects. Two familie s of such related defects were observed in the unannealed samples. Ann ealing data revealed additional peaks and enabled another defect famil y formed above 400 degrees C to be identified. The energy levels and c apture cross sections have been determined for three new families of r elated defects. The defect families were presumed to be either complex vacancy clusters or hydrogen related. (C) 1998 American Institute of Physics. [S0021-8979(98)06817-0].