DOPING-INDUCED BAND-EDGE DISPLACEMENTS AND BAND-GAP NARROWING IN 3C-SIC, 4H-SIC, 6H-SIC, AND SI

Models for doping-induced band edge displacements and band gap narrowi ng in both n-type and p-type 3C-, 4H-, and 6H-SiC are presented for th e first time. For comparison, Si has also been considered. The models constitute an extension of the theory of Jain and Roulston [Solid Stat e Electron. 34, 453 (1991)] and take into account the three different electron effective mass components associated with hexagonal lattices. Furthermore, a more careful treatment of minority carrier correlation energy has been made, applying a two-band model for the dielectric fu nction of a hole gas in the plasmon-pole approximation. The results fo r the band edge displacements are expressed in simple analytical form as functions of doping concentration. (C) 1998 American Institute of P hysics. [S0021-8979(98)00717-8].