THEORETICAL-STUDY OF AUGER EFFECT IN 1.5 MU-M QUANTUM-WELL LASERS

A new methodology for the derivation of the Auger recombination rate i n quantum wells is presented. An expression of the Auger recombination rate is given, taking into account a realistic valence band structure , the Fermi-Dirac statistics, and the analytic expressions of the tran sition matrix element for both bound-bound and bound-unbound Auger pro cesses. Using this method, distributions of carriers involved in bound -bound and bound-unbound recombination processes are carried out. The bound-unbound recombination mechanism is identified as a significant c ontribution to the Auger total current density. Because the transition matrix element is found to be a significantly increasing function of the quantum-well width, our computations show that the Auger effect is expected to be enhanced in narrow wells. Subsequently, strain depende nce of the Auger current density is analyzed. It is found that the Aug er effect is reduced by strain in some cases but it is equally shown t hat this is not a general rule as it depends on the valence subband st ructure. The effect of temperature on Auger events is also investigate d. In particular, it is found, that around room temperature, the tempe rature sensitivity of Auger current density is quite low in good agree ment with many experimental data. (C) 1998 American Institute of Physi cs. [S0021-8979(98)02117-3].