PASSIVATION PROPERTIES OF THE LOCAL OXIDATION OF SILICON-OXIDE SI INTERFACE DEFECTS/

The passivation properties of the local oxidation of silicon (LOCOS) o xide/Si interface defects were investigated by reverse current measure ment and capacitance transient spectroscopy of pn junction diodes that had a large LOCOS-defined perimeter. The LOCOS/Si interface defects h ad some properties similar to those of the SiO2/Si(100) interface stat es of metal-oxide-silicon (MOS) diodes. However, there was a significa nt difference between the two interfaces in the rate of unpassivated d efects remaining after H-2 annealing: this rate was higher for the LOC OS/Si interface than for the MOS interface. (C) 1998 American Institut e of Physics. [S0021-8979(98)08717-9].