ESCAPE LENGTH OF ULTRAVIOLET-INDUCED PHOTOELECTRONS IN ALKALI IODIDE AND CSBR EVAPORATED-FILMS - MEASUREMENTS AND MODELING

Citation
T. Boutboul et al., ESCAPE LENGTH OF ULTRAVIOLET-INDUCED PHOTOELECTRONS IN ALKALI IODIDE AND CSBR EVAPORATED-FILMS - MEASUREMENTS AND MODELING, Journal of applied physics, 84(5), 1998, pp. 2890-2896
Citations number
43
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
84
Issue
5
Year of publication
1998
Pages
2890 - 2896
Database
ISI
SICI code
0021-8979(1998)84:5<2890:ELOUPI>2.0.ZU;2-1
Abstract
The escape length of electrons photoinduced from thin CsI, KI, RbI, Na I, and CsBr evaporated films was measured in the 140-180 nm photon spe ctral range. Theoretical model predictions of the escape length value are in fair agreement with the experimental results. They wary between 10 and 40 nm, the highest values being for CsI, RbI and CsBr. For CsI , measured and calculated ultraviolet-induced escape length values are consistent with that determined from x-ray photoemission quantum yiel d data. Post-evaporation annealing: of the films had no major impact o n the measured electron transport properties. (C) 1998 American Instit ute of Physics. [S0021-8979(98)02717-0].