CHARACTERISTICS OF DIODE STRUCTURES BASED ON THE P-PBTE(GA)-IN CONTACT

Authors
AKIMOV BA BOGDANOV EV BOGOYAVLENSKIY VA RYABOVA LI SHTANOV VI
Citation
Ba. Akimov et al., CHARACTERISTICS OF DIODE STRUCTURES BASED ON THE P-PBTE(GA)-IN CONTACT, Infrared physics & technology, 39(5), 1998, pp. 287-292
Citations number
6
Categorie Soggetti
Optics,"Physics, Applied","Instument & Instrumentation
Journal title
Infrared physics & technology → ACNP
ISSN journal
13504495
Volume
39
Issue
5
Year of publication
1998
Pages
287 - 292
Database
ISI
SICI code
1350-4495(1998)39:5<287:CODSBO>2.0.ZU;2-S
Abstract
A pronounced nonlinearity of the current-voltage characteristics (CVC) accompanied by a high photosensitivity to IR-illumination was observe d in In contact-[p-PbTe(Ga)]-Pt contact structures. The experimental d ata are discussed in terms of energy-band distortion near the Schottky barrier taking into account that at high-ohmic state formation the Fe rmi level (FL) is pinned by an impurity level within the energy gap. T he possible influence of the crystal imperfections is also considered. (C) 1998 Elsevier Science B.V. All rights reserved.