MODELING OF RADIATION-INDUCED CHARGE TRAPPING AT THE SI-ASTERISK-SIO2INTERFACE OF MOS STRUCTURES

Citation
Yd. Tkachev et al., MODELING OF RADIATION-INDUCED CHARGE TRAPPING AT THE SI-ASTERISK-SIO2INTERFACE OF MOS STRUCTURES, Physica status solidi. a, Applied research, 140(1), 1993, pp. 163-171
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
140
Issue
1
Year of publication
1993
Pages
163 - 171
Database
ISI
SICI code
0031-8965(1993)140:1<163:MORCTA>2.0.ZU;2-3
Abstract
The effect of high-temperature treatments in inert atmosphere, perform ed after deposition of phosphorus-doped polycrystalline silicon, on th e accumulation of radiation-induced charge in Si-SiO2-Si structures i s investigated. It is shown that these treatments lead to an increase of hole trap concentration on both SiO2 interfaces, and the hole trap creation at the Si-SiO2 interface is related with phosphorus diffusio n from Si into SiO2. A moder of charge accumulation at the Si*-SiO2 i nterface is proposed, which satisfactorily explains experimental data.