MODELING OF RADIATION-INDUCED CHARGE TRAPPING AT THE SI-ASTERISK-SIO2INTERFACE OF MOS STRUCTURES

The effect of high-temperature treatments in inert atmosphere, perform ed after deposition of phosphorus-doped polycrystalline silicon, on th e accumulation of radiation-induced charge in Si-SiO2-Si structures i s investigated. It is shown that these treatments lead to an increase of hole trap concentration on both SiO2 interfaces, and the hole trap creation at the Si-SiO2 interface is related with phosphorus diffusio n from Si into SiO2. A moder of charge accumulation at the Si*-SiO2 i nterface is proposed, which satisfactorily explains experimental data.