Yv. Gomenyuk et al., THE BEHAVIOR OF MINORITY-CARRIERS IN THERMALLY STIMULATED STUDIES OF THE SI-SIO2 INTERFACE, Physica status solidi. a, Applied research, 140(1), 1993, pp. 173-178
Features of thermally stimulated charge release (TSCR) currents from c
enters in the transition layer of the Si-SiO2 interface in the tempera
ture range from 6 to 20 K are investigated. It is shown that for a cor
rect determination of the shallow acceptor center density in the n-typ
e semiconductor one should control injection abilities of the substrat
e contact. Filling of the acceptor states in the interface should be p
erformed at proper temperatures when hole injection into the semicondu
ctor bulk takes place. Different situations are modelled using two typ
es of substrate contacts: (i) made by deposition of the Al layer on th
e back side of a wafer; (ii) created by rubbing the back side with GaZ
n eutectic. A method to determine the concentration of deep acceptor c
enters in the semiconductor bulk based on TSCR current registration af
ter different modes of trap filling is proposed.