THE BEHAVIOR OF MINORITY-CARRIERS IN THERMALLY STIMULATED STUDIES OF THE SI-SIO2 INTERFACE

Features of thermally stimulated charge release (TSCR) currents from c enters in the transition layer of the Si-SiO2 interface in the tempera ture range from 6 to 20 K are investigated. It is shown that for a cor rect determination of the shallow acceptor center density in the n-typ e semiconductor one should control injection abilities of the substrat e contact. Filling of the acceptor states in the interface should be p erformed at proper temperatures when hole injection into the semicondu ctor bulk takes place. Different situations are modelled using two typ es of substrate contacts: (i) made by deposition of the Al layer on th e back side of a wafer; (ii) created by rubbing the back side with GaZ n eutectic. A method to determine the concentration of deep acceptor c enters in the semiconductor bulk based on TSCR current registration af ter different modes of trap filling is proposed.