Sg. Patel et al., GROWTH AND ELECTRICAL-PROPERTIES OF ZIRCONIUM TRISULFIDE SINGLE-CRYSTALS, Physica status solidi. a, Applied research, 140(1), 1993, pp. 207-212
Single crystals of the lamellar compounds ZrS3 having the stoichiometr
y MX(3) (M = IVB, X = S, Se, Te) are grown by a chemical vapour transp
ort technique. They are characterised by EDAX and X-ray diffraction te
chniques. The behaviour of resistivity under pressure is thoroughly st
udied. The semiconducting nature of the specimens is inferred from the
resistance versus temperature measurements. The increase in resistanc
e of the samples with increase in pressure is explained.