GROWTH AND CHARACTERIZATION OF UNDOPED AND DOPED BI12TIO20 CRYSTALS

Citation
F. Mersch et al., GROWTH AND CHARACTERIZATION OF UNDOPED AND DOPED BI12TIO20 CRYSTALS, Physica status solidi. a, Applied research, 140(1), 1993, pp. 273-281
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
140
Issue
1
Year of publication
1993
Pages
273 - 281
Database
ISI
SICI code
0031-8965(1993)140:1<273:GACOUA>2.0.ZU;2-P
Abstract
Single crystals of B12TiO20 are grown from solutions containing an exc ess of Bi2O3 by the TSSG (''top-seeded solution growth'') technique. D oping with iron, manganese, aluminium, and chromium is performed by ad ding the oxides to the melt. Measurements of dielectric constant, refr active indices, optical activity, absorption, light-induced absorption , and dark conductivity are performed.