FORMATION OF TISI2 N(+)/P-SILICON JUNCTIONS BY IMPLANTATION THROUGH METAL TECHNIQUE/

Experimental studies of the formation and electrical characterization of TiSi2/n(+)/p-Si shallow junctions are presented. The formation of s hallow n(+)-p junction, by ion implantation of As+ through Ti films ev aporated on p-Si substrates followed by rapid thermal annealing (RTA) and conventional furnace annealing, is performed in these experiments. Structural techniques such as secondary ion mass spectroscopy (SIMS) and Rutherford backscattering (RBS) experiments are employed to charac terize these devices. RUMP simulations are deployed to analyze and int erpret the RBS data. Temperature dependent current-voltage measurement s of these junctions are performed in the temperature range of 250 to 400 K. Interpretations for these results are sought from conventional p-n junction theory.