A COMPARISON BETWEEN THERMAL ANNEALING AND UV-RADIATION ANNEALING OF GAMMA-IRRADIATED NMOS TRANSISTORS

Authors
PEJOVIC M RISTIC G GOLUBOVIC S
Citation
M. Pejovic et al., A COMPARISON BETWEEN THERMAL ANNEALING AND UV-RADIATION ANNEALING OF GAMMA-IRRADIATED NMOS TRANSISTORS, Physica status solidi. a, Applied research, 140(1), 1993, pp. 53-57
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
140
Issue
1
Year of publication
1993
Pages
53 - 57
Database
ISI
SICI code
0031-8965(1993)140:1<53:ACBTAA>2.0.ZU;2-0