2-PORT NOISE AND IMPEDANCE MEASUREMENTS FOR 2-TERMINAL DEVICES WITH ARESONANT-TUNNELING DIODE EXAMPLE

A two-port technique is presented for determining the circuit elements and noise sources of the equivalent circuit of a two-terminal device at microwave frequencies. The two-terminal device is connected as a tw o-port so that intrinsic and parasitic circuit elements can be obtaine d from full two-port S-parameter measurements. This measurement does n ot require one of the two contacts to be grounded, which makes it part icularly well suited for the characterization of integrated devices wh ere parasitic elements become important and cannot be easily calculate d, The noise of the device is measured by employing a noise-figure met er and the intrinsic noise is computed from the measured terminal nois e, As an example, the impedance and noise elements of a resonant tunne ling diode (RTD) are measured over frequency ranges of 2-8 and 2-4 GHz , respectively.