INTERMODULATION ANALYSIS OF THE COLLECTOR-UP INGAAS INALAS/INP HBT USING VOLTERRA SERIES/

Authors
LI B PRASAD S
Citation
B. Li et S. Prasad, INTERMODULATION ANALYSIS OF THE COLLECTOR-UP INGAAS INALAS/INP HBT USING VOLTERRA SERIES/, IEEE transactions on microwave theory and techniques, 46(9), 1998, pp. 1321-1323
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE transactions on microwave theory and techniques → ACNP
ISSN journal
00189480
Volume
46
Issue
9
Year of publication
1998
Pages
1321 - 1323
Database
ISI
SICI code
0018-9480(1998)46:9<1321:IAOTCI>2.0.ZU;2-M
Abstract
The intermodulation (IM) distortion of the collector-up InGaAs/InAlAs/ InP heterojunction bipolar transistor (HBT) is analyzed using Volterra -series theory. A T-equivalent circuit is used for this analysis. The contribution and interaction of four nonlinear elements: base-emitter resistance, base-emitter capacitance, base-collector capacitance, and common base-current gain are analyzed, For the particular device under investigation, it is found that the cancellation effect is not signif icant and the base-emitter resistance nonlinearity dominates the third -order IM.