DEPOSITION OF SILICON DIOXIDE FILMS WITH AN ATMOSPHERIC-PRESSURE PLASMA-JET

Authors
BABAYAN SE JEONG JY TU VJ PARK J SELWYN GS HICKS RF
Citation
Se. Babayan et al., DEPOSITION OF SILICON DIOXIDE FILMS WITH AN ATMOSPHERIC-PRESSURE PLASMA-JET, Plasma sources science & technology, 7(3), 1998, pp. 286-288
Citations number
22
Categorie Soggetti
Phsycs, Fluid & Plasmas
Journal title
Plasma sources science & technology → ACNP
ISSN journal
09630252
Volume
7
Issue
3
Year of publication
1998
Pages
286 - 288
Database
ISI
SICI code
0963-0252(1998)7:3<286:DOSDFW>2.0.ZU;2-1
Abstract
A plasma jet has been developed which deposits silica films at up to 3 000 Angstrom min(-1) at 760 Torr and 115 to 350 degrees C. The jet ope rates by feeding oxygen and helium gas between two coaxial electrodes that are driven by a 13.56 MHz radio frequency source at 40 to 500 W. Tetraethoxysilane is mixed with the effluent of the plasma jet and dir ected onto a substrate located 1.7 cm downstream. The properties of th e silica films, as determined by infrared spectroscopy and capacitance measurements, are comparable to those of thermally grown silicon diox ide films at 900 degrees C.