POLARIZATION-INDEPENDENT SEMICONDUCTOR ARRAYED-WAVE-GUIDE GRATINGS USING A DEEP-RIDGE WAVE-GUIDE STRUCTURE

Authors
KOHTOKU M SANJOH H OKU S KADOTA Y YOSHIKUNI Y
Citation
M. Kohtoku et al., POLARIZATION-INDEPENDENT SEMICONDUCTOR ARRAYED-WAVE-GUIDE GRATINGS USING A DEEP-RIDGE WAVE-GUIDE STRUCTURE, IEICE transactions on electronics, E81C(8), 1998, pp. 1195-1204
Citations number
37
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEICE transactions on electronics → ACNP
ISSN journal
09168524
Volume
E81C
Issue
8
Year of publication
1998
Pages
1195 - 1204
Database
ISI
SICI code
0916-8524(1998)E81C:8<1195:PSAGU>2.0.ZU;2-L
Abstract
This paper describes the design of polarization insensitive InP-based arrayed waveguide gratings (AWGs), and the characteristics of fabricat ed devices. The use of a deep-ridge waveguide structure made the fabri cation of compact polarization-insensitive AWGs possible. As a result, a low crosstalk (- 30 dB) 8-channel AWG and a large-scale (64 channel ) AWG with 50 GHz channel spacing could be fabricated. An integrated c ircuit containing an 8-channel AWG with photodetectors is also describ ed.